NTTS2P03R2

www.DataSheet4U.com NTTS2P03R2 Power MOSFET −2.48 Amps, −30 Volts P−Channel Enhancement Mode Single Micro8t Package Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided http://onsemi.com Applications −2.48 AMPERES −30 VOLTS 85 mW @ VGS = −10 V Single P−Channel D Unit V V °C/W W A A °C/W W A A °C/W W A A A Source °C/W W A A A °C Source Source Gate 8 1 Micro8 CASE 846A STYLE 1 G S Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Thermal Resistance − Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Thermal Resistance − Junction−to−Ambient (Note 3.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 5.) Thermal Resistance − Junction−to−Ambient (Note 4.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 5.) Operating and Storage Temper...