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UPA1870 Dataheets PDF



Part Number UPA1870
Manufacturers NEC
Logo NEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Datasheet UPA1870 DatasheetUPA1870 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 27.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 DataSheet4U.com 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 DataShee ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 µ PA1870GR-9JG 0.8 MAX. 0.10 M 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note 1 Note 2 EQUIVALENT CIRCUIT 20 ±12 ±6.0 ±80 2.0 150 V V A A W °C °C Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation Channel Temperature Storage Temperature –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. DataSheet4U.com Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14886EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000 www.DataSheet4U.com µPA1870 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 4.0 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A / µs TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 3.0 A VGS(on) = 4.0 V RG = 10 Ω 0.5 5 12.0 13.0 15.0 15.0 15.5 20.8 900 295 170 55 210 300 340 10 2 6 0.80 400 1000 20.0 21.0 27.0 1.0 MIN. TYP. MAX. 10 ±10 1.5 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC et4U.com DataShee DataSheet4U.com TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS Wave Form VGS VGS Wave Form 0 10% VGS(on) 90% D.U.T. IG = 2 mA 50 Ω RL VDD 90% 90% PG. ID 0 10% 10% td(on) ton tr td(off) toff tf 2 DataSheet4U.com Data Sheet G14886EJ2V0DS www.DataSheet4U.com µPA1870 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 5 100 FORWARD BIAS SAFE OPERATING AREA d ite V) .5 Lim 4 ID(pulse) = PW 1m s 10 ms dT - Derating Factor - % ID - Drain Current - A 10 R V (@ n) (o DS GS =1 0µ s ID(DC) 60 1 DC 10 0m s 40 20 0.1 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 0 0 30 60 120 90 TA - Ambient Temperature - ˚C 150 0.01 0.1 1.0 10.0 100.0 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V 20 FORWARD TRANSFER CHARACTERISTICS 100 10 VDS = 10 V ID - Drain Current - A VGS = 4.0 V 15 ID - Drain Current - A TA = 125˚C 1 0.1 et4U.com 25˚C 75˚C −25˚C DataShee 10 VGS = 2.5 V 0.01 DataSheet4U.com 0.001 0.0001 5 0 0 0.1 0.2 0.3 0.4 0.5 0.00001 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 VDS = 10 V 1.5 VDS = 10 V ID = 1mA VGS(off) - Gate Cut-off Voltage - V 10 1 1 0.1 TA = −25˚C 25˚C 75˚C 125˚C 0.5 −50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tc.


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