UPA1872

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1872 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1 2, 3 4 5 6, 7 8 : Drain1 : Source1 : Gate1 : Gate2 : Source2 : Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) RDS(on)2 = 13.5 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)3 = 15.5 mΩ MAX. (VGS = 3.1 V, ID = 5.0 A) RDS(on)4 = 18.0 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A) Built-in G-S protection diode against ESD 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 DataShee ORDERING INFORMATION PART NUMBER PACKAGE DataSheet4U.com µPA1872GR-9JG 0.65 0.8 MAX. 0.10 M 0.1 Power TSSOP8 0.27 +0.03 –0.08 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±10 ±80 2.0 150 –55 to +150 V V A A W °C °C Gate1 EQUIVALENT CIRCUIT Drain1 Drain2 Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation (2 unit) Channel Temper...