MMDF3N06VL

MMDF3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features On−resistance Area Product about One−half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E−FETt Predecessors Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E−FET Miniature SO−8 Surface Mount Package − Saves Board Space Mounting Information for SO−8 Package Provided http://onsemi.com VDSS 60 V RDS(ON) TYP 130 mΩ ID MAX 3.0 A N−Channel D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage, (RGS = 1 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) VDSS VDGR VGS ID ID IDM PD 60 Vdc 60 Vdc ± 15 Vdc 3.3 Adc 0.7 10 Apk 2.0 W Operating and Storage Temperature Range TJ, Tstg −55 to °C 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.3 Apk, L ...