2SK3236

www.DataSheet4U.com 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · · 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 35 105 30 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA ― SC-67 2-10R1B DataSheet4U.com 35 3.0 150 -55~150 68 TOSHIBA DataShee Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.16 62.5 Unit °C/W °C/W Note 1: Please use devises on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C, L = 40 mH, RG = 25 W, IAR = 35 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution DataSheet4U....