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N-Channel MOSFET. 2SK3236 Datasheet

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N-Channel MOSFET. 2SK3236 Datasheet
















2SK3236 MOSFET. Datasheet pdf. Equivalent













Part

2SK3236

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3236 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching R egulator Applications, DC-DC Converter and Motor Drive Applications · · · · 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ. ) High forward transfer admittance: |Yf s| = 42 S (typ.) Low leakage current: I DSS = 100 µA (max) (VDS =.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3236 Datasheet


Toshiba Semiconductor 2SK3236

2SK3236; 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Max imum Ratings (Ta = 25°C) Characteristi cs Drain-source voltage Drain-gate volt age (RGS = 20 kW) Gate-source voltage D rain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IA R EAR Tch Tstg Rating 60 60 ±20 35 105 30 Unit V V V A W mJ A mJ °C °C Dra in power dissipation (.


Toshiba Semiconductor 2SK3236

Tc = 25°C) Single pulse avalanche energ y (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temp erature Storage temperature range JEDE C JEITA ― SC-67 2-10R1B DataSheet4U .com 35 3.0 150 -55~150 68 TOSHIBA D ataShee Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal re sistance, channel to .


Toshiba Semiconductor 2SK3236

ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.16 62.5 Unit °C/W °C/W Note 1: Pl ease use devises on condition that the channel temperature is below 150°C. No te 2: VDD = 50 V, Tch = 25°C, L = 40 m H, RG = 25 W, IAR = 35 A Note 3: Repeti tive rating; pulse width limited by max imum channel temperature. This transist or is an electrostatic sensitive device . Please handle with c.




Part

2SK3236

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3236 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching R egulator Applications, DC-DC Converter and Motor Drive Applications · · · · 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ. ) High forward transfer admittance: |Yf s| = 42 S (typ.) Low leakage current: I DSS = 100 µA (max) (VDS =.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3236 Datasheet




 2SK3236
www.DataSheet4U.com
2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· 4 V gate drive
· Low drain-source ON resistance: RDS (ON) = 13.5 m(typ.)
· High forward transfer admittance: |Yfs| = 42 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 60 V
VDGR 60 V
VGSS ±20 V
ID
35
A
IDP 105
PD 30 W
EAS DataShe6e8t4U.com mJ
IAR 35 A
EAR
3.0 mJ
Tch 150 °C
Tstg
-55~150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.16
62.5
°C/W
°C/W
Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 40 mH, RG = 25 W, IAR = 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
DataShee
DataSheet4U.com
1 2002-08-12




 2SK3236
www.DataSheet4U.com
2SK3236
Electrical Characteristics (Ta = 25°C)
et4U.com
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 18 A
VGS = 10 V, ID = 18 A
VDS = 10 V, ID = 18 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾ ¾ ±10 mA
¾ ¾ 100 mA
60 ¾ ¾ V
1.3 ¾ 2.5 V
¾ 22 36
mW
¾ 13.5 20
21 42 ¾
S
¾ 2300 ¾
¾ 220 ¾ pF
¾ 370 ¾
tr VGS10 V
ton 0 V
¾ 9¾
ID
=
18
A
VOUT
¾ 23 ¾
RL = 1.67 W
ns
tf ¾ 20 ¾
VDD ~- 30 V
toff Duty <= 1%, tw = 10 ms
¾ 100 ¾
Qg
Qgs DaVtaDSD h~-e4e8tV4,UV.GcSom= 10 V, ID = 35 A
Qgd
¾ 52 ¾
¾ 37 ¾ nC
¾ 15 ¾
DataShee
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 35 A, VGS = 0 V
IDR = 35 A, VGS = 0 V,
dIDR/dt = 50 A/ms
Min Typ. Max Unit
¾ ¾ 35 A
¾ ¾ 105 A
¾ ¾ -1.7 V
¾ 60 ¾ ns
¾ 81 ¾ nC
Marking
K3236
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
DataSheet4U.com
2 2002-08-12




 2SK3236
www.DataSheet4U.com
20
10
16 8
ID - VDS
4
5 3.75
3.5
12
3.25
8
4 VGS = 3 V
Common source, Tc = 25°C
0 Pulse test
0 0.2 0.4 0.6 0.8
1
Drain-source voltage VDS (V)
2SK3236
100
10
8
80
6
5
ID - VDS
4.5
Common source
Tc = 25°C
Pulse test
60
4
40
20 3.5
VGS = 3 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
et4U.com
ID - VGS
100
25
Tc = -55°C
100
80
1
0.8
60 0.6
DataSheet4U.com
40 0.4
20
Common source
VDS = 10 V
Pulse test
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
0.2
0
0
VDS - VGS
Common source
Tc = 25°C
Pulse test
ID = 35 A
20
10
4 8 12 16
Gate-source voltage VGS (V)
20
DataShee
ïYfsï - ID
100
Tc = -55°C
25
100
10
RDS (ON) - ID
0.1
0.01
4
VGS = 10 V
1
1
DataSheet4U.com
Common source
VDS = 10 V
Pulse test
10 100
Drain current ID (A)
Common source
Tc = 25°C
Pulse test
0.001
1
10
Drain current ID (A)
100
3 2002-08-12




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