CPH3319

www.DataSheet4U.com Ordering number : ENN7264 CPH3319 P-Channel Silicon MOSFET CPH3319 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2152A [CPH3319] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --12 ±8 --1.5 --6 0.9 150 --55 to +150 Unit V V A A W °C °C www.DataSheet4U.com Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=± 6.4V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--0.8A ID=--0.8A, VGS=-4.5V ID=--0.4A, VGS=-2.5V ID=--0.1A, VGS=-1.8V Ratings min --12 --10 ± 10 --0.3 1.3 1.8 220 320 430 290 450 650 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : JU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely h...