DatasheetsPDF.com

Switching Applications. CPH3319 Datasheet

DatasheetsPDF.com

Switching Applications. CPH3319 Datasheet
















CPH3319 Applications. Datasheet pdf. Equivalent













Part

CPH3319

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : EN N7264 CPH3319 P-Channel Silicon MOSFET CPH3319 Ultrahigh-Speed Switching App lications Features • • • Package Dimensions unit : mm 2152A [CPH3319] 2 .9 0.4 0.15 Low ON-resistance. Ultrahi gh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0. 9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolute Maximum.
Manufacture

Sanyo Semicon Device

Datasheet
Download CPH3319 Datasheet


Sanyo Semicon Device CPH3319

CPH3319; Ratings at Ta=25°C Parameter Drain-to- Source Voltage Gate-to-Source Voltage D rain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te mperature Storage Temperature Symbol VD SS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic bo ard (900mm2!0.8mm) Conditions Ratings - -12 ±8 --1.5 --6 0.9 150 --55 to +150 Unit V V A A W °C °C www.


Sanyo Semicon Device CPH3319

.DataSheet4U.com Electrical Characteris tics at Ta=25°C Parameter Drain-to-Sou rce Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage C urrent Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-St ate Resistance Symbol V(BR)DSS IDSS IGS S VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS =-12V, VGS=0 VGS=± 6.4V.


Sanyo Semicon Device CPH3319

, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=-- 0.8A ID=--0.8A, VGS=-4.5V ID=--0.4A, VG S=-2.5V ID=--0.1A, VGS=-1.8V Ratings mi n --12 --10 ± 10 --0.3 1.3 1.8 220 320 430 290 450 650 --1.0 typ max Unit V A µA V S mΩ mΩ mΩ Marking : JU Continued on next page. Any and all SANYO products described or contained h erein do not have specifications that c an handle applications that.





Part

CPH3319

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : EN N7264 CPH3319 P-Channel Silicon MOSFET CPH3319 Ultrahigh-Speed Switching App lications Features • • • Package Dimensions unit : mm 2152A [CPH3319] 2 .9 0.4 0.15 Low ON-resistance. Ultrahi gh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0. 9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolute Maximum.
Manufacture

Sanyo Semicon Device

Datasheet
Download CPH3319 Datasheet




 CPH3319
www.DataSheet4U.com
Ordering number : ENN7264
CPH3319
P-Channel Silicon MOSFET
CPH3319
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Package Dimensions
unit : mm
2152A
[CPH3319]
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : CPH3
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
VDSS www.DataSheet4U.com
VGSS
ID
IDP PW10µs, duty cycle1%
PD Mounted on a ceramic board (900mm2!0.8mm)
Tch
Tstg
Electrical Characteristics at Ta=25°C
Ratings
--12
±8
--1.5
--6
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JU
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=±6.4V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--0.8A
ID=--0.8A, VGS=--4.5V
ID=--0.4A, VGS=--2.5V
ID=--0.1A, VGS=--1.8V
min
--12
--0.3
1.3
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
1.8 S
220 290 m
320 450 m
430 650 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
www.DataSheet4U.com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80902 TS IM TA-100047 No.7264-1/4




 CPH3319
www.DataSheet4U.com
CPH3319
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--1.5A
VDS=--6V, VGS=--4.5V, ID=--1.5A
VDS=--6V, VGS=--4.5V, ID=--1.5A
IS=--1.5A, VGS=0
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --0.8A
RL=7.5
D VOUT
CPH3319
P.G 50S
Ratings
min typ max
Unit
160 pF
45 pF
35 pF
11 ns
45 ns
29 ns
30 ns
2.6 nC
0.25 nC
0.65 nC
--0.92
--1.5 V
www.DataSheet4U.com
ID -- VDS
--1.5
--3.5V --3.0V --2.5V
ID -- VGS
--2.0
VDS= --6V
--1.2
--1.5
--0.9 --1.8V
--1.5V
--1.0
--0.6
--0.3
0
0
800
700
VGS= --1.0V
--0.1 --0.2 --0.3 --0.4 --0.5
Drain-to-Source Voltage, VDS -- V IT04643
RDS(on) -- VGS
Ta=25°C
600
--0.8A
500
ID= --0.4A
400
300
200
100
0
0
--1 --2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V IT04645
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Gate-to-Source Voltage, VGS -- V IT04644
RDS(on) -- Ta
800
700
600
500
400
ID=
ID=
--0.1A,
--0.4A,
VGS=
VGS=
--1.8V
--2.5V
300 ID= --0.8A, VGS= --4.5V
200
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04646
No.7264-2/4
www.DataSheet4U.com




 CPH3319
www.DataSheet4U.com
CPH3319
yfs-- ID
55
VDS= --6V
33
2
25°C
1.0
7
Ta=
--25°C
75°C
5
2
--1.0
7
5
33
22
IF -- VSD
VGS=0
0.1
--0.01
23
5 7 --0.1
2 3 5 7 --1.0
3
VDD= --6.0V
2 VGS= --4.5V
Drain Current, ID -- A
SW Time -- ID
23
IT04647
100
7 tr
5
td(off)
tf
3
2
td(on)
10
7
5
--0.1
--0.4
5
3
2
100
7
5
3
2
--0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V IT04648
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
3
2
--0.1 2
--4.5
VDS= --6.0V
--4.0 ID= --1.5A
3 5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--3.5
--3.0
--2.5
--2.0
10
23
0 --2 --4 --6 --8 --10 --12
wwwIT0.4D649ataSheet4U.com Drain-to-Source Voltage, VDS -- V IT04650
ASO
--10
7 IDP= --6.0A
<10µs
5
3
2 ID= --1.5A
--1.0
7
5
3 Operation in this
10ms1ms
DC
100ms
operation
2 area is limited by RDS(on).
--1.5
--1.0
--0.5
0
0
1.0
0.5 1.0 1.5 2.0 2.5 3.0
Total Gate Charge, Qg -- nC
PD -- Ta
IT04651
--0.1
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(900mm2!0.8mm)
--0.1
2 3 5 7 --1.0
2 3 5 7 --10
2
Drain-to-Source Voltage, VDS -- V IT04652
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04653
No.7264-3/4
www.DataSheet4U.com




Recommended third-party CPH3319 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)