HAF1009

www.DataSheet4U.com HAF1009(L), HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features www.DataSheet4U.com 4 4 1 1 2 3 3 Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) www.DataSheet4U.com Outline LDPAK 2, 4 D 1 G Gate resistor Tempe– rature sencing circuit Latch circuit Gate shut– down circuit 2 S 3 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, May.13.2003, page 1 of 10 www.DataSheet4U.com www.DataSheet4U.com HAF1009(L), HAF1009(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS VGSS ID ID (pulse) IDR PchNote2 Tch Tstg Note1 Ratings –60 –16 2.5 –40 –80 –40 50 150 –55 to +150 Unit V V V A A A W °C °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation...