DatasheetsPDF.com

STB200NF04 Dataheets PDF



Part Number STB200NF04
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STB200NF04 DatasheetSTB200NF04 Datasheet (PDF)

www.DataSheet4U.com STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS www.DataSheet4U.com s HIGH CURRENT, HIGH SWITCHING SPEE.

  STB200NF04   STB200NF04


Document
www.DataSheet4U.com STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS www.DataSheet4U.com s HIGH CURRENT, HIGH SWITCHING SPEED s AUTOMOTIVE Table 2: Order Codes SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev. 3 October 2004 1/15 www.DataSheet4U.com www.DataSheet4U.com DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 12 3 I2PAK www.DataSheet4U.com STP200NF04 - STB200NF04 - STB200NF04-1 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 ± 20 120 120 480 310 2.07 1.5 1.3 -55 to 175 Unit V V V A A A W W/°C V/ns J °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package Table 4: Thermal Data Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max Thermal Resistance Junction-ambient (Free air) Max Maximum Lead Temperature For Soldering Purpose 0.48 (see Figure 17) 62.5 300 °C/W °C/W °C/W °C www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 90 A 2 3.3 Min. 40 1 10 ±100 4 3.7 Typ. Max. Unit V µA µA nA V mΩ 2/15 www.DataSheet4U.com www.DataSheet4U.com TO-220 / I2PAK / D2PAK www.DataSheet4U.com STP200NF04 - STB200NF04 - STB200NF04-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID = 90 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 5100 1600 600 Max. Unit S pF pF pF Table 7: Switching On/Off Symbol td(on) tr td(off) tf Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 20 V, ID = 90 A RG = 4.7Ω VGS = 10 V (see Figure 20) VDD = 20V, ID = 120 A, VGS = 10V (see Figure 23) Min. Typ. 30 320 140 120 170 30 62 210 Max. Unit ns ns ns ns nC nC nC Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, VGS = 0 VDD = 30V, Tj = 150°C www.DataSheet4U.com (see Figure 21) ISD = 120 A, di/dt = 100A/µs 85 190 4.5 Test Conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/15 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com STP200NF04 - STB200NF04 - STB200NF04-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics www.DataSheet4U.com Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/15 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com STP200NF04 - STB200NF04 - STB200NF04-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature www.DataSheet4U.com Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/15 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com STP200NF04 - STB200NF04 - STB200NF04-1 Figure 15: Thermal Resistance Rthj-a vs PCB Copper Area Figure 16: Max Power Dissipation vs PCB Copper Area www.


STB200NF03-1 STB200NF04 STB200NF04-1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)