N-CHANNEL POWER MOSFET
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STP20NM50FD STB20NM50FD-1
N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh™ Power MOSFET (with FAST...
Description
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STP20NM50FD STB20NM50FD-1
N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh™ Power MOSFET (with FAST DIODE)
TYPE STP20NM50FD STB20NM50FD-1
s s s s s s
VDSS 500V 500V
RDS(on) <0.25Ω <0.25Ω
Rds(on)*Qg 8.36 Ω*nC 8.36 Ω*nC
ID 20 A 20 A
TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
3 1 2
12
3
TO-220
I2PAK (Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
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s
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP20NM50FD STB20NM50FD-1 MARKING P20NM50FD B20NM50FD-1 PACKAGE TO-220 I PAK
2
PACKAGING TUBE TUBE
August 2003
1/9
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DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.
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STP20NM50FD/STB20NM50FD-1
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature...
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