2SK3699-01MR

www.DataSheet4U.com 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 900 VDSX *5 900 ±3.7 ID ID(puls] ±14.8 VGS ±30 IAR *2 3.7 EAS *1 171.1 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.16 Tc=25°C 43 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V V A A V A mJ kV/µs kV/µs W °C °C Vrms *6 f=60Hz, t=60sec. Equivalent circuit schematic Drain(D) Gate(G) Source(S) < *1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch =150°C < < < < *3 IF = -ID, -di/dt=50A/µs, Vcc = BVDSS, Tch = 150°C *4 VDS = 900V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ...