www.DataSheet4U.com
Ordering number : ENN7525
MCH5809
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
...
www.DataSheet4U.com
Ordering number : ENN7525
MCH5809
MOSFET : N-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
MCH5809
DC / DC Converter Applications
Features
Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a
Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [SBD] Short reverse recovery time. Low forward voltage.
0.25 2.1 1.6 0.25
[MCH5809]
0.3 0.15
4
5
0.65 2.0
(Bottom view)
0.07
3
2
1
5
4
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
0.85
1
2
3
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 ±12 1.5 6 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QJ
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ext...