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N-channel MOSFET. 2SK3938 Datasheet

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N-channel MOSFET. 2SK3938 Datasheet
















2SK3938 MOSFET. Datasheet pdf. Equivalent













Part

2SK3938

Description

Silicon N-channel MOSFET



Feature


www.DataSheet4U.com Silicon MOSFETs (Sm all Signal) 2SK3938 Silicon N-channel MOSFET For switching circuits  Featu res  High-speed switching  SSSMin i type package, allowing downsizing of the equipment and  automatic insertio n through the tape packing 0.33+0.05 0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02 Unit: mm (0.40) (0 .40) 0.80±0.05 1.20±0.05 5° Par.
Manufacture

Panasonic Semiconductor

Datasheet
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Panasonic Semiconductor 2SK3938

2SK3938; ameter Drain-source surrender voltage Ga te-source surrender voltage Drain curre nt Peak drain current Power dissipation Channel temperature Storage temperatur e Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 30 ±12 100 200 100 125 –55 t o +125 Unit V V mA mA mW °C °C 1: Ga te 2: Source 3: Drain 0.15 min.  A bsolute Maximum Ratings Ta = 25°C 0.2 3+0.05 –0.02 1 2 0 to 0.


Panasonic Semiconductor 2SK3938

.01 0.52±0.03 5° SSSMini3-F1 Packag e Marking Symbol: 6U Min 30 1.0 ±10 0 .5 1.0 7 5 20 55 12 1.5 12 8 Typ Max Un it V µA µA V Ω mS pF pF pF ns ns Electrical Characteristics Ta = 25° C±3°C Parameter Drain-source surrende r voltage Drain-source cutoff current G ate-source cutoff current Gate threshol d voltage Drain-source ON resistance Fo rward transfer admittance Shor.


Panasonic Semiconductor 2SK3938

t-circuit forward transfer capacitance ( Common source) Short-circuit output cap acitance (Common source) Reverse transf er capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDS S IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 µA, VGS = 0 VDS = 20 V, VGS = 0 VGS = ±10 V, VDS = 0 ID = 1.0 µA, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = .





Part

2SK3938

Description

Silicon N-channel MOSFET



Feature


www.DataSheet4U.com Silicon MOSFETs (Sm all Signal) 2SK3938 Silicon N-channel MOSFET For switching circuits  Featu res  High-speed switching  SSSMin i type package, allowing downsizing of the equipment and  automatic insertio n through the tape packing 0.33+0.05 0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02 Unit: mm (0.40) (0 .40) 0.80±0.05 1.20±0.05 5° Par.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SK3938 Datasheet




 2SK3938
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Silicon MOSFETs (Small Signal)
2SK3938
Silicon N-channel MOSFET
For switching circuits
Features
High-speed switching
SSSMini type package, allowing downsizing of the equipment and 
automatic insertion through the tape packing
0.33+–00..0025
3
Unit: mm
0.10+–00..0025
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
Gate-source surrender voltage
VDSS
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating
30
±12
100
200
100
125
55 to +125
Unit
V
V
mA
mA
mW
°C
°C
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
1: Gate
2: Source
3: Drain
SSSMini3-F1 Package
Marking Symbol: 6U
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
VTH
RDS(on)
Yfs
ID = 10 µA, VGS = 0
VDS = 20 V, VGS = 0
VGS = ±10 V, VDS = 0
ID = 1.0 µA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3 V, f = 1 kHz
Ciss
30 V
1.0 µA
±10 µA
0.5 1.0 1.5
V
7 12
58
20 55
mS
12 pF
Short-circuit output capacitance
(Common source)
Coss VDS = 3 V, VGS = 0, f = 1 MHz
10 pF
Reverse transfer capacitance
(Common source)
Crss
6
Turn-on time *
Turn-off time *
ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA
toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA
350
350
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : ton , toff measurement circuit
VOUT
290
90%
VGS 10%
VGS = 0 V to 3 V
50
100 µF
VDD = 3 V
VOUT
10%
90%
pF
ns
ns
ton toff
Publication date: December 2004
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SJF00043AED
1




 2SK3938
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2SK3938
120
2SK3938_ PD-Ta
PD Ta
80
40
0
0 40 80 120
Ambient temperature Ta (°C)
2SK3938_ Yfs -VGS
Yfs  VGS
VDS = 3 V
120
80
Ta = −25°C
25°C
85°C
40
0
01 2 3
Gate-source voltage VGS (V)
2SK3938_ ID-VDS
ID VDS
120
Ta = 25°C
80 VGS = 2.8 V
2.6 V
40 2.4 V
2.2 V
2.0 V
0
0 4 8 12
Drain-source voltage VDS (V)
2SK3938_ Yfs -ID
Yfs  ID
VGS = 3 V
Ta = 25°C
120
2SK3938_ ID-VGS
ID VGS
Ta = −25°C
VDS = 3 V
120
25°C
85°C
80
40
0
012345
Gate-source voltage VGS (V)
2SK3938_ RDS(on)-VGS
RDS(on) VGS
20
ID = 10 mA
16
80
40
0
0 20 40 60 80 100
Drain current ID (mA)
12
8
4 Ta = 85°C
25°C
25°C
0
04
8 12
Gate-source voltage VGS (V)
2
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 2SK3938
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
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2003 SEP




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