2SK3938

www.DataSheet4U.com Silicon MOSFETs (Small Signal) 2SK3938 Silicon N-channel MOSFET For switching circuits  Features  High-speed switching  SSSMini type package, allowing downsizing of the equipment and　 automatic insertion through the tape packing 0.33+0.05 –0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02 Unit: mm (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 30 ±12 100 200 100 125 –55 to +125 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0.15 min.  Absolute Maximum Ratings Ta = 25°C 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5° SSSMini3-F1 Package Marking Symbol: 6U Min 30 1.0 ±10 0.5 1.0 7 5 20 55 12 1.5 12 8 Typ Max Unit V µA µA V Ω mS pF pF pF ns ns  Electrical Characteristics Ta = 25°C±3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 µA, VGS = 0 VDS = 20 V, VGS = 0 VGS = ±10 V, VDS = 0 ID = 1.0 µA, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V I...