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Silicon MOSFET. CPH5831 Datasheet

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Silicon MOSFET. CPH5831 Datasheet
















CPH5831 MOSFET. Datasheet pdf. Equivalent













Part

CPH5831

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : EN N8220 CPH5831 CPH5831 Features • MOSFET : N-Channel Silicon MOSFET SB D : Schottky Barrier Diode General-Pur pose Switching Device Applications • • DC / DC converters. Composite ty pe with a N-Channel Silicon MOSFET (MCH 3406) and a Schottky Barrier Diode (SBS 010M) contained in one package facilita ting high-density mounting.
Manufacture

Sanyo Semicon Device

Datasheet
Download CPH5831 Datasheet


Sanyo Semicon Device CPH5831

CPH5831; . [MOS] • Low ON-resistance. • Ultra high-speed switching. • 1.8V drive. [ SBD] • Short reverse recovery time. Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C P arameter [MOSFET] Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable P ower Dissipation Channel Temperature St orage Temperature [SBD] Repet.


Sanyo Semicon Device CPH5831

itive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Out put Current Surge Forward Current Junct ion Temperature Storage Temperature VRR M VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 15 15 2 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP P D Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8m m) 1unit 20 ±10 3 12 0.9 .


Sanyo Semicon Device CPH5831

150 --55 to +125 V V A A W °C °C Symbo l Conditions Ratings Unit Marking : XH Any and all SANYO products described or contained herein do not have specifi cations that can handle applications th at require extremely high levels of rel iability, such as life-support systems, aircraft's control systems, or other a pplications whose failure can be reason ably expected to res.





Part

CPH5831

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : EN N8220 CPH5831 CPH5831 Features • MOSFET : N-Channel Silicon MOSFET SB D : Schottky Barrier Diode General-Pur pose Switching Device Applications • • DC / DC converters. Composite ty pe with a N-Channel Silicon MOSFET (MCH 3406) and a Schottky Barrier Diode (SBS 010M) contained in one package facilita ting high-density mounting.
Manufacture

Sanyo Semicon Device

Datasheet
Download CPH5831 Datasheet




 CPH5831
www.DataSheet4U.com
Ordering number : ENN8220
CPH5831
CPH5831
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converters.
Composite type with a N-Channel Silicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained
in one package facilitating high-density mounting.
[MOS]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : XH
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1cycle
Ratings
Unit
20
±10
3
12
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
2
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12805PE TS IM TB-10G0I79IM7 No.8220-1/6




 CPH5831
www.DataSheet4U.com
CPH5831
Electrical Characteristics at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=1.5mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
min typ
20
0.4
3.36
15
5.6
48
58
72
280
60
38
13
35
35
25
8.8
0.85
0.85
0.82
0.27
0.30
65
138
Unit
max
V
1 µA
±10 µA
1.3 V
S
63 m
82 m
110 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
0.32
0.35
600
15
V
V
V
µA
pF
ns
°C / W
Package Dimensions
unit : mm
2171
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5 43
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
DataSheet4 U .com
No.8220-2/6




 CPH5831
www.DataSheet4U.com
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1.5A
RL=6.67
D VOUT
CPH5831
P.G 50S
CPH5831
trr Test Circuit
[SBD]
Duty10%
50
10µs
100
--5V
10
trr
ID -- VDS
[MOSFET]
3.0
2.5
2.0
1.5 VGS=1.0V
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03490
RDS(on) -- VGS [MOSFET]
160
Ta=25°C
140
120
100
1.0A
80 1.5A
60 ID=0.5A
40
20
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT03492
DataSheet4 U .com
4.0
VDS=10V
3.5
ID -- VGS
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT03491
RDS(on) -- Ta
[MOSFET]
140
120
100
80
60
IIDIDD===01.15..0A5AA, ,V,VVGGGSS=S=1=2.48.5.V0VV
40
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03493
No.8220-3/6




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