HVL147

www.DataSheet4U.com HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0200 Rev.2.00 Oct 20, 2004 Features Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL147 Laser Mark N Package Code EFP Pin Arrangement Cathode mark Mark 1 N 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 DataSheet 4 U .com www.DataSheet4U.com HVL147 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability * 1 Symbol IR VF C rf — Min — — — — — 100 Typ — — — 2.5 — — Max 100 1.00 0.31 — 1.5 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 2 mA, f = 100 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the EFP package. 3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.2.00 ...