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HVL399CM

Renesas Technology

Variable Capacitance Diode

HVL399CM Variable Capacitance Diode for VCO Features • High capacitance ratio. (n = 2.30 to 2.46) • Low series resistanc...



HVL399CM

Renesas Technology


Octopart Stock #: O-557386

Findchips Stock #: 557386-F

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Description
HVL399CM Variable Capacitance Diode for VCO Features High capacitance ratio. (n = 2.30 to 2.46) Low series resistance. (rs = 0.4 Ω max) Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. REJ03G0230-0200 Rev.2.00 Mar 21, 2006 Ordering Information Type No. HVL399CM Laser Mark 6 Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark 1 6 2 1. Cathode 2. Anode Rev.2.00 Mar 21, 2006 page 1 of 4 HVL399CM Absolute Maximum Ratings Item Reverse voltage Junction temperature Storage temperature VR Tj Tstg Symbol Value 10 125 −55 to +125 (Ta = 25°C) Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR1   10 nA VR = 10 V IR2   50 VR = 10 V, Ta = 60°C Capacitance C0.5 18.5  20.0 pF VR = 0.5V, f = 1 MHz C2.5 7.30  8.60 VR = 2.5 V, f = 1 MHz Capacitance ratio n 2.30  2.46 — C0.5 / C2.5 Series resistance rS   0.40 Ω VR = 1 V, f = 470 MHz Note: For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.2.00 Mar 21, 2006 page 2 of 4 HVL399CM Main Characteristic 10–9 10–10 Reverse current IR (A) 10–11 10–12 10–13 0 5 10 15 Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage 0.30 f = 470MHz Capacitance C (pF) 30 f = 1MHz 25 20 15 10 5 0 0 1...




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