IXFN25N80

www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 V V V V TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 TC= 25°C IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXFK IXFN 800 800 ± 20 ± 30 27N80 27 25N80 25 27N80 108 25N80 100 27N80 14 25N80 13 30 5 500 800 800 ± 20 ± 30 27 25 108 100 14 13 30 5 520 150 -55 ... +150 2500 3000 V V V V A A A A A A mJ V/ns W °C °C °C °C V~ V~ Features G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 ... +150 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 ±200 TJ = 25°C TJ = 125°C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K nA µA mA Ω Ω International standard packages JEDEC TO-264 AA, epox...