IXFK26N90

www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFK/IXFX 26N90 IXFK/IXFX 25N90 VDSS IDSS RDS(on) trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 26N90 25N90 26N90 25N90 26N90 25N90 Maximum Ratings 900 900 ±20 ±30 26 25 104 100 26 25 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A PLUS 247TM (IXFX) G D S (TAB) TO-264 AA (IXFK) A A G D (TAB) S mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6 300 Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting Space savings High power density Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. ...