H7N0308AB
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS (on) = 3.8 mΩ typ.
Low drive current 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
D S
REJ03G1122-0400 (Previous: ADE-208-1569B)
Rev.4.00 Sep 07, 2005
1. Gate 2. Drain (Flan...
