NGA-386

www.DataSheet4U.com Preliminary Preliminary Product Description Stanford Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. NGA-386 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier Small Signal Gain vs. Frequency 25 20 15 dB 10 5 0 0 1 2 3 4 5 6 7 Product Features High Gain: 18.9dB at 1950Mhz Cascadable 50 ohm: 1.2:1 VSWR Patented GaAs HBT Technology Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications Cellular, PCS, CDPD Wireless Data, SONET Frequency GHz Parameters: Test Conditions: Z0 = 50 Ohms, ID = 35 mA, T = 25ºC Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz Symbol Units dBm dBm dBm dBm dBm dBm dB dB dB MHz f = DC - 5000 MHz f = DC - 5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 2000 MHz dB dB dB dB V ºC/W Min. Typ. 14.5 15.0 15.6 25.8 27.0 27.0 20.9 18.9 18.0 2000 1.2:1 1.3:1 23.4 22.2 21.6 2.7 4.0 144 Max. P1dB IP3 Third Order Intercept Point Power out per tone = 0 dBm S21 Bandwidth S11 S22 S1...