Document
www.DataSheet4U.com
PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
Rev. 02 — 25 November 2004 Product data sheet
1. Product profile
1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
Table 1: Product overview Package Philips PBLS1504Y PBLS1504V SOT363 SOT666 JEITA SC-88 -
Type number
1.2 Features
s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count.
1.3 Applications
s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment.
1.4 Quick reference data
Table 2: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) equivalent on-resistance IC = −500 mA; IB = −50 mA open base Conditions open base Min Typ 300 Max −15 −500 500 Unit V mA mΩ
TR1; PNP; low VCEsat transistor
TR2; NPN; resistor-equipped transistor VCEO collector-emitter voltage 50 V
DataSheet 4 U .com
www.DataSheet4U.com
Philips Semiconductors
PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
Quick reference data …continued Parameter output current (DC) bias resistor 1 (input) bias resistor ratio Conditions Min 15.4 0.8 Typ 22 1 Max 100 28.6 1.2 Unit mA kΩ
Table 2: Symbol IO R1 R2/R1
2. Pinning information
Table 3: Pin 1 2 3 4 5 6 Discrete pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1
1 2 3
001aab555
R1 R2 TR2 TR1
Simplified outline
6 5 4
Symbol
6 5 4
1
2
3
sym036
3. Ordering information
Table 4: Ordering information Package Name PBLS1504Y PBLS1504V SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT363 SOT666 Type number
4. Marking
Table 5: Marking codes Marking code [1] *C4 C4 Type number PBLS1504Y PBLS1504V
[1] * = -: made in Hong Kong. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
9397 750 13436
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 25 November 2004
2 of 14
DataSheet 4 U .com
www.DataSheet4U.com
Philips Semiconductors
PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
5. Limiting values
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Per device Ptot Tstg Tj Tamb
[1]
Conditions open emitter open base open collector tp ≤ 1 ms; δ ≤ 0.02 tp ≤ 1 ms; δ ≤ 0.02 Tamb ≤ 25 °C open emitter open base open collector
[1]
Min -
Max −15 −15 −6 −500 −1 −50 −100 200 50 50 10 +40 −10 100 100 200 300 +150 150 +150
Unit V V V mA A mA mA mW V V V V V mA mA mW mW °C °C °C
Transistor TR1: PNP
Transistor TR2: NPN
output current (DC) peak collector current total power dissipation total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C Tamb ≤ 25 °C
[1]
−65 −65
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7: Symbol Per device Rth(j-a) thermal resistance from junction to ambient SOT363 SOT666
[1] [2]
Thermal characteristics Parameter Conditions in free air
[1] [1] [2]
Min
Typ
Max
Unit
-
-
416 416
K/W K/W
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method.
9397 750 13436
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 25 November 2004
3 of 14
DataSheet 4 U .com
www.DataSheet4U.com
Philips Semiconductors
PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
7. Characteristics
Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO ICES IEBO hFE Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = −15 V; IE = 0 A VCB = −15 V; IE = 0 A; Tj = 150 °C VCE = −15 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −2 V; IC = −10 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA RCEsat VBEsat VBEon fT Cc equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −2 V; IC = −100 mA VCE = −5 V; IC = −100 mA; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB .