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PBLS1504V Dataheets PDF



Part Number PBLS1504V
Manufacturers NXP
Logo NXP
Description 15V PNP BISS loadswitch
Datasheet PBLS1504V DatasheetPBLS1504V Datasheet (PDF)

www.DataSheet4U.com PBLS1504Y; PBLS1504V 15 V PNP BISS loadswitch Rev. 02 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Package Philips PBLS1504Y PBLS1504V SOT363 SOT666 JEITA SC-88 - Type number 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power requi.

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www.DataSheet4U.com PBLS1504Y; PBLS1504V 15 V PNP BISS loadswitch Rev. 02 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Package Philips PBLS1504Y PBLS1504V SOT363 SOT666 JEITA SC-88 - Type number 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count. 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment. 1.4 Quick reference data Table 2: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) equivalent on-resistance IC = −500 mA; IB = −50 mA open base Conditions open base Min Typ 300 Max −15 −500 500 Unit V mA mΩ TR1; PNP; low VCEsat transistor TR2; NPN; resistor-equipped transistor VCEO collector-emitter voltage 50 V DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors PBLS1504Y; PBLS1504V 15 V PNP BISS loadswitch Quick reference data …continued Parameter output current (DC) bias resistor 1 (input) bias resistor ratio Conditions Min 15.4 0.8 Typ 22 1 Max 100 28.6 1.2 Unit mA kΩ Table 2: Symbol IO R1 R2/R1 2. Pinning information Table 3: Pin 1 2 3 4 5 6 Discrete pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 001aab555 R1 R2 TR2 TR1 Simplified outline 6 5 4 Symbol 6 5 4 1 2 3 sym036 3. Ordering information Table 4: Ordering information Package Name PBLS1504Y PBLS1504V SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT363 SOT666 Type number 4. Marking Table 5: Marking codes Marking code [1] *C4 C4 Type number PBLS1504Y PBLS1504V [1] * = -: made in Hong Kong. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 9397 750 13436 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 25 November 2004 2 of 14 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors PBLS1504Y; PBLS1504V 15 V PNP BISS loadswitch 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Per device Ptot Tstg Tj Tamb [1] Conditions open emitter open base open collector tp ≤ 1 ms; δ ≤ 0.02 tp ≤ 1 ms; δ ≤ 0.02 Tamb ≤ 25 °C open emitter open base open collector [1] Min - Max −15 −15 −6 −500 −1 −50 −100 200 50 50 10 +40 −10 100 100 200 300 +150 150 +150 Unit V V V mA A mA mA mW V V V V V mA mA mW mW °C °C °C Transistor TR1: PNP Transistor TR2: NPN output current (DC) peak collector current total power dissipation total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C Tamb ≤ 25 °C [1] −65 −65 Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7: Symbol Per device Rth(j-a) thermal resistance from junction to ambient SOT363 SOT666 [1] [2] Thermal characteristics Parameter Conditions in free air [1] [1] [2] Min Typ Max Unit - - 416 416 K/W K/W Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 9397 750 13436 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 25 November 2004 3 of 14 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors PBLS1504Y; PBLS1504V 15 V PNP BISS loadswitch 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO ICES IEBO hFE Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = −15 V; IE = 0 A VCB = −15 V; IE = 0 A; Tj = 150 °C VCE = −15 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −2 V; IC = −10 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA RCEsat VBEsat VBEon fT Cc equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −2 V; IC = −100 mA VCE = −5 V; IC = −100 mA; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB .


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