www.DataSheet4U.com
HSD226
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-1536A (Z) Rev.1 Jul. 2002 F...
www.DataSheet4U.com
HSD226
Silicon
Schottky Barrier Diode for High Speed Switching
ADE-208-1536A (Z) Rev.1 Jul. 2002 Features
Low reverse current, Low capacitance. Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HSD226 Laser Mark S4 Package Code SFP
Pin Arrangement
Cathode mark Mark 1
S4
2 1. Cathode 2. Anode
DataSheet 4 U .com
www.DataSheet4U.com
HSD226
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 1. 10 ms Sine Wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg
1
Value 25 200 50 125 −55 to +125
Unit V mA mA °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Note: IR C Min Typ Max 0.33 0.38 0.45 2.80 Unit V V µA pF Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz
1. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.1, Jul. 2002, page 2 of 5
DataSheet 4 U .com
www.DataSheet4U.com
HSD226
Main Characteristic
101 100 10–1
Forward current IF (A)
10–4
10–2 10–3 10
–4
Reverse current IR (A)
10–5
Ta = 75°C
Ta = 75°C Ta = 25°C
10–6
Ta = 25°C
10–5 10–6 10–7 10–8 0 0.2
10–7
0.4
0.6
0.8
1.0
10–8
0
10
20
30
40
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz 10...