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HSD226

Renesas Technology

Silicon Schottky Barrier Diode for High Speed Switching

www.DataSheet4U.com HSD226 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1536A (Z) Rev.1 Jul. 2002 F...


Renesas Technology

HSD226

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www.DataSheet4U.com HSD226 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1536A (Z) Rev.1 Jul. 2002 Features Low reverse current, Low capacitance. Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HSD226 Laser Mark S4 Package Code SFP Pin Arrangement Cathode mark Mark 1 S4 2 1. Cathode 2. Anode DataSheet 4 U .com www.DataSheet4U.com HSD226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 1. 10 ms Sine Wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg 1 Value 25 200 50 125 −55 to +125 Unit V mA mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Note: IR C Min     Typ     Max 0.33 0.38 0.45 2.80 Unit V V µA pF Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz 1. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.1, Jul. 2002, page 2 of 5 DataSheet 4 U .com www.DataSheet4U.com HSD226 Main Characteristic 101 100 10–1 Forward current IF (A) 10–4 10–2 10–3 10 –4 Reverse current IR (A) 10–5 Ta = 75°C Ta = 75°C Ta = 25°C 10–6 Ta = 25°C 10–5 10–6 10–7 10–8 0 0.2 10–7 0.4 0.6 0.8 1.0 10–8 0 10 20 30 40 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage f=1MHz 10...




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