IRHNA7160

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHNA7160 IRHNA8160 N-CHANNEL MEGA RAD HARD 100 Volt, 0.045 Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA7160 IRHNA8160 BV DSS 100V 100V RDS(on) 0.045Ω 0.045Ω ID 51A 51A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rad...