RADIATION HARDENED POWER MOSFET
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PD - 93969
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radia...
Description
www.DataSheet4U.com
PD - 93969
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154Ω 0.154Ω ID -29A -29A
IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655
RAD-Hard
™
HEXFET TECHNOLOGY
®
QPL Part Number JANSR2N7426U JANSF2N7426U
SMD-2
International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TM
HEXFET®
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating F...
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