STB100NF04

www.DataSheet4U.com N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE STP100NF04 STB100NF04 STB100NF04-1 s s s STP100NF04 STB100NF04, STB100NF04-1 AUTOMOTIVE SPECIFIC VDSS 40 V 40 V 40 V RDS(on) < 0.0046 Ω < 0.0046 Ω <0.0046 Ω ID 120 A 120 A 120 A Pw 300 W 300 W 300 W 12 3 TYPICAL RDS(on) = 0.0043 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 I2PAK 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ORDERING INFORMATION SALES TYPE STP100NF04 STB100NF04T4 STB100NF04-1 MARKING P100NF04 B100NF04 B100NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE February 2002 1/15 DataSheet 4 U .com www.DataSheet4U.com STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (#) ID IDM (l) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = ...