(CY7C1355C / CY7C1357C) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
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PRELIMINARY
CY7C1355C CY7C1357C
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Archite...
Description
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PRELIMINARY
CY7C1355C CY7C1357C
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture
Features
No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock Pin compatible and functionally equivalent to ZBT™ devices Internally self-timed output buffer control to eliminate the need to use OE Registered inputs for flow-through operation Byte Write capability 3.3V/2.5V I/O power supply Fast clock-to-output times — 6.5 ns (for 133-MHz device) — 7.0 ns (for 117-MHz device) — 7.5 ns (for 100-MHz device) Clock Enable (CEN) pin to enable clock and suspend operation Synchronous self-timed writes Asynchronous Output Enable Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and 165-Ball fBGA packages Three chip enables for simple depth expansion. Automatic Power-down feature available using ZZ mode or CE deselect JTAG boundary scan for BGA and fBGA packages Burst Capability—linear or interleaved burst order Low standby power
Functional Description[1]
The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355C/CY7C1357C is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operati...
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