HA1127FP

HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C) Item Collector base voltage Collector substrate voltage Collector emitter voltage Emitter-base voltage Collector current Allowable collector power Allowable collector power Symbol VCBO VCIO VCEO VEBO IC PC* PC Topr Tstg 1 HA1127 20 20 15 5 50 300 750* 625* 2 3 Unit V V V V mA mW mW Operating temperature Storage temperature –55 to +125 –55 to +125 °C °C Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature. 3. See page 51. 504 HA1127, HA1127P, HA1127FP Electrical Characteristics (Ta = 25°C) Item Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-substrate breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current amplification ratio Gain-bandwidth product Collector output capacitance Emitter input capacitance Switching time Symbol V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO VCE(sat) VBE hFE fT Cob Cin ton toff tstg Min 20 15 20 5 — — — — — 40 — — — — — — — Typ — — — — Max — — — — Unit V V V V nA µA V V V VEE = 3 V MHz pF pF ns ns ns VCE = 3 V, IC = 3 mA VCB = 3 V, IE = 0, f = 1 MHz VCB = 3 V, IE = 0,...