IRHF57130

www.DataSheet4U.com PD - 93789A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08Ω 0.08Ω 0.08Ω 0.10Ω ID 11.7A 11.7A 11.7A 11.7A IRHF57130 100V, N-CHANNEL R5 TECHNOLOGY ™ TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche ...