RADIATION HARDENED POWER MOSFET
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PD-91864B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF)
Product Summary
Part Number IRHF733...
Description
www.DataSheet4U.com
PD-91864B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF)
Product Summary
Part Number IRHF7330SE Radiation Level 100K Rads (Si)
IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675
RAD Hard HEXFET TECHNOLOGY
™ ®
RDS(on) ID QPL Part Number 1.39Ω 2.9A JANSR2N7463T2
TO-205AF
International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetit...
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