MA2SD30

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD30 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features Small reverse current: IR < 2 µA (at VR = 30 V) Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ 2 0.30±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * 0+0 –0.05 5˚ Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 100 200 1 125 −55 to +125 Unit V (0.15) V mA mA A °C °C 0.01±0.01 1: Anode 2: Cathode SSMini2-F1 Package Junction temperature Storage temperature Marking Symbol: 8N Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Symbol IR1 IR2 Forward voltage VF1 VF2 Terminal capacitance Reverse recovery time * Conditions VR = 10 V VR = 30 V IF = 10 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Min Typ Max 0.3 2 1.20+0.05 –0.03 Unit µA V 0.38 0.51 9 1 0.44 0.58 Ct trr pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a ...