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Schottky Barrier Diodes (SBD)
MA2SD31
Silicon epitaxial planar type
Unit: mm
For super high speed...
www.DataSheet4U.com
Schottky Barrier Diodes (SBD)
MA2SD31
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
IF(AV) = 200 mA rectification is possible. Low forward voltage: VF < 0.47 V (at IF = 200 mA)
0.80±0.05
0.60+0.05 –0.03 0.80+0.05 –0.03 1
(0.60)
0.12+0.05 –0.02
(0.80)
(0.60)
0.01±0.01
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V
5˚
2 0.30±0.05
0+0 –0.05
0.01±0.01
mA mA A °C °C
1: Anode 2: Cathode SSMini2-F1 Package
Marking Symbol: 8N
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Symbol IR1 IR2 Forward voltage Terminal capacitance Reverse recovery time * VF Ct trr VR = 10 V VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 0.38 25 2 Conditions Min Typ Max 20 200 0.47 V pF ns Unit µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and outp...