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PBSS301ND
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 02 — 25 April 2005 Product data sheet
1....
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PBSS301ND
20 V, 4 A
NPN low VCEsat (BISS)
transistor
Rev. 02 — 25 April 2005 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS)
transistor in a SOT457 (SC-74) SMD plastic package.
PNP complement: PBSS301PD.
1.2 Features
s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation
1.3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film
Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA
[2]
Conditions open base
[1]
Min -
Typ 50
Max 20 4 15 70
Unit V A A mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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Philips Semiconductors
PBSS301ND
20 V, 4 A
NPN low VCEsat (BISS)
transistor
2. Pinning information
Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector
1 2 3 6 5 4 3 4
sym014
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3: Ord...