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Composite Transistors
XN1110
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digit...
www.DataSheet4U.com
Composite
Transistors
XN1110
Silicon
PNP epitaxial planer
transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Emitter-coupled
transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1
q
UN1110 × 2 elements
0.8
s Basic Part Number of Element
+0.2
s Absolute Maximum Ratings
Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin)
Marking Symbol: AD Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0...