www.DataSheet4U.com
Composite Transistors
XN01212 (XN1212)
Silicon NPN epitaxial planar type
Unit: mm
For switching/d...
www.DataSheet4U.com
Composite
Transistors
XN01212 (XN1212)
Silicon
NPN epitaxial planar type
Unit: mm
For switching/digital circuits ■ Features
Two elements incorporated into one package (Emitter-coupled
transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half
3
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
2 0.30+0.10 –0.05 10˚
1
■ Basic Part Number
UNR2212 (UN2212) × 2
1.1+0.2 –0.1
(0.65)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 100 300 150 −55 to +150
Unit V V mA mW °C °C
1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
4: Emitter 5: Base (Tr1) Mini5-G1 Package
Marking Symbol: 9K Internal Connection
3 4 5
Tr2
1.1+0.3 –0.1
Tr1 1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small
/Large)
2
Condit...