HVM189S

www.DataSheet4U.com HVM189S Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0442-0100 (Previous: ADE-208-1502) Rev.1.00 Dec 20, 2004 Features Low forward resistance. (rf = 5.5 Ω max) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM189S Laser Mark H9 Package Code MPAK Pin Arrangement 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2 2 1 (Top View) Rev.1.00 Dec 20, 2004 page 1 of 4 DataSheet 4 U .com www.DataSheet4U.com HVM189S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: 1. Per one device. Symbol VR IF 1 Pd * Tj Tstg Value 60 50 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability * Note: Symbol IR VF C rf — Min — — — 3. 5 200 Typ — — — — — Max 100 1.0 2.4 5.5 — Unit nA V pF Ω V Test Condition VR = 60 V IF = 10 mA VR = 0 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. 1. Failure criterion; IR > 100 nA at VR = 60 V Rev.1.00 Dec 20, 2004 page 2 of 4 DataSheet 4 U .com www.DataSheet4U.com HVM189S Main Characteristic 10-3 10-6 10-7 10 Forward current IF (A) -5 10-7 Reverse current IR (A) 10-8 10-9 10-9 10-10 10-11 10-12 10-11 10-13 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage ...