IRHNJ64130

www.DataSheet4U.com PD - 95816 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 IRHNJ64130 300K Rads (Si) 600K Rads (Si) TM IRHNJ67130 100V, N-CHANNEL TECHNOLOGY RDS(on) 0.042Ω 0.042Ω 0.042Ω 0.042Ω ID 22A* 22A* 22A* 22A* IRHNJ68130 1000K Rads (Si) SMD-0.5 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage ...