FDFM2P110

FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. Applications „ Buck Boost Features This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. „ -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V „ Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A SG A1 6A C/D S2 5S G3 4D TOP MLP 3x3 AS D BOTTOM Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation (Steady State) (Note 1a) (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking 2P110 Device FDFM2P110 Reel Size 7inch Tape Width 12mm ©2005 Fairchild Semiconductor Corporation 1 Ratings -20 ±12 -3.5 -10 20 2 2 0.8 -55...