Document
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFMA2P853
July 2014
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode applications.
Features
MOSFET:
-3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V RDS(ON) = 160 m: @ VGS = -2.5 V RDS(ON) = 240 m: @ VGS = -1.8 V
Schottky:
VF < 0.46 V @ 500 mA
Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm
RoHS Compliant
A NC D
C
D
A1 NC 2
D3
MicroFET C G S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS
ID
Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage
Drain Current -Continuous -Pulsed
(Note 1a)
VRRM IO
PD
Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current
Power dissipation for Single Operation Power dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA RTJA RTJA RTJA
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b) (Note 1c) (Note 1d)
Package Marking and Ordering Information
Device Marking .853
Device FDFMA2P853
Reel Size 7inch
Tape Width 8mm
©2008 Fairchild Semiconductor Corporation
1
6C 5G 4S
Ratings -20 r8 -3.0 -6 30 1 1.4 0.7
-55 to +150
Units V V
A
V A
W oC
86
173
oC/W
86
140
Quantity 3000 units
FDFMA2P853 Rev. D3 (W)
FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
'BVDSS 'TJ
IDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = –250 PA
ID = –250 PA, Referenced to 25qC
VDS = –16 V, VGS = 0 V VGS = ± 8 V, VDS = 0 V
–20 –12
V mV/qC
–1
PA
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
'VGS(th) 'TJ RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = –250 PA
ID = –250 PA, Referenced to 25qC
VGS = –4.5 V, ID = –3.0 A VGS = –2.5 V, ID = –2.5 A VGS = –1.8 V, ID = –1.0 A VGS= –4.5 V, ID = –3.0 A, TJ=125qC
VGS = –4.5 V, VDS = –5 V
VDS = –5 V, ID = –3.0 A
–0.4 –0.7 –1.3 V
2
mV/qC
90 120 m: 120 160 172 240 118 160
–20
A
7
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V, f = 1.0 MHz
435
pF
80
pF
45
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 :
VDS = –10 V, ID = –3.0 A, VGS = –4.5 V
9
18
ns
11 19
ns
15 27
ns
6
12
ns
4
6
nC
0.8
nC
0.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V,
IS = –1.1 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = –3.0 A,
Qrr
Diode Reverse Recovery Charge dIF/dt = 100 A/µs
–1.1 A –0.8 –1.2 V
17
ns
6
nC
Schottky Diode Characteristics
IR
Reverse Leakage
IR
Reverse Leakage
VR = 5 V VR = 20 V
VF
Forward Voltage
VF
Forward Voltage
IF = 500mA IF = 1A
TJ = 25qC TJ = 125qC TJ = 25qC TJ = 85qC TJ = 125qC TJ = 25qC TJ = 125qC
TJ = 25qC TJ = 125qC
9.9 50
PA
2.3 10 mA
9.9 100 PA
0.3 1
mA
2.3 10 mA
0.4 0.46 V
0.3 0.35
0.5 0.55 V 0.49 0.54
2
FDFMA2P853 Rev D3 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by
design while RTJA is determined by the user's board design. (a) MOSFET RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(b) MOSFET RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(d) Schottky RTJA = 140°C/W when mounted on a minimum pad of 2 oz.