Schottky Diode. FDFMA2P853 Datasheet

FDFMA2P853 Datasheet PDF, Equivalent


Part Number

FDFMA2P853

Description

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
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FDFMA2P853 Datasheet
www.DataSheet4U.com
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
„ -3.0 A, -20V. RDS(ON) = 120 m@ VGS = -4.5 V
RDS(ON) = 160 m@ VGS = -2.5 V
RDS(ON) = 240 m@ VGS = -1.8 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
PIN A
C
„ VF < 0.46 V @ 500 mA
NC D
A1
D NC 2
6C
5G
D3
MicroFET C G S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
VRRM
IO
PD
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
Tape Width
8mm
4S
Ratings
-20
±8
-2.2
-6
20
1
1.4
0.7
-55 to +150
Units
V
V
A
V
A
W
oC
86
173 oC/W
86
140
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFMA2P853 Rev. C (W)
DataSheet4 U .com

FDFMA2P853 Datasheet
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V, ID = -250µA
ID = -250µA,
Referenced to 25°C
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = -250µA
ID = -250µA,
Referenced to 25°C
VGS = -4.5V, ID = -3.0A
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -1.0A
VGS = -4.5V, ID = -3.0A
TJ = 125°C
VGS = -4.5V, VDS = -5V
VDS = -5V, ID = -3.0A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V,
f = 1.0MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6
VDS = -10V, ID = -3.0A,
VGS = -4.5V
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.1 A (Note 2)
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF= -3.0A, dIF/dt=100A/µs
Schottky Diode Characteristic
IR Reverse Leakage
VF Forward Voltage
VR = 20V
IF = 500mA
TJ = 25°C
TJ = 85°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Min
-20
-
-
-
-0.4
-
-
-
-
-
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
- -V
-12 - mV/°C
- -1 µA
- ±100 nA
-0.7 -1.5
V
2 - mV/°C
90 120
120 160
172 240 m
118 160
- -A
7-S
435 -
80 -
45 -
pF
pF
pF
9 18 ns
11 19 ns
15 27 ns
6 12 ns
4 6 nC
0.8 - nC
0.9 - nC
- -1.1
-0.8 -1.2
17 -
6-
A
V
ns
nC
9.9 100
µA
0.3 1 mA
2.3 10 mA
0.4 0.46
0.3 0.35
V
DataSheet4 U .com
2 FDFMA2P853 Rev. C (W)


Features Datasheet pdf www.DataSheet4U.com FDFMA2P853 Integrat ed P-Channel PowerTrench® MOSFET and S chottky Diode August 2005 FDFMA2P853 Integrated P-Channel PowerTrench® MOSF ET and Schottky Diode General Descripti on This device is designed specifically as a single package solution for the b attery charge switch in cellular handse t and other ultra-portable applications . It features a MOSFET with low on-stat e resistance and an independently conne cted low forward voltage schottky diode for minimum conduction losses. The Mic roFET 2x2 package offers exceptional th ermal performance for it's physical siz e and is well suited to linear mode app lications. Features MOSFET: „ -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V RDS(ON) = 160 mΩ @ VGS = -2.5 V RDS (ON) = 240 mΩ @ VGS = -1.8 V „ Low P rofile - 0.8 mm maximun - in the new pa ckage MicroFET 2x2 mm Schottky: „ VF < 0.46 V @ 500 mA PIN A C NC D A D N C D 1 2 3 6 5 4 C G S MicroFET Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Absolute Maximum Ratings TA = 25°C unle.
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