FDFMC2P120

www.DataSheet4U.com FDFMC2P120 July 2005 FDFMC2P120 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications Buck Boost Features –2 A, –20 V RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm PIN 1 2 3 TO BOTTOM NC 1 2 6 5 A A S 6 TOP 5 4 S 3 4 G BOTTOM MLP 3x3 Absolute Maximum Ratings Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Power Dissipation (Steady State) (Note 1a) Ratings –20 ±12 –3.5 –10 20 2 2.4 1.2 –55 to +150 Units V V A V A W °C (Note a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 60 145 °C/W Package Marking and Ordering Information Device Marking 2P120 Device FDFMC2P120 Reel Size 7’’ Tape width 12mm Quantity 3000 units ©2005 Fairch...