MRF6S21060NR1

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications. Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications 225_C Capable Plastic Package N Suffix Indicates Lead--Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S21060N Rev. 5, 12/2008 MRF6S21060NR1 MRF6S21060NBR1 2110--2170 MHz, 14 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6S21060NR1 CASE 1484--04, STYLE 1 TO--272...