RTE002P02

www.DataSheet4U.com RTE002P02 Transistors 2.5V Drive Pch MOS FET RTE002P02 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) EMT3 1.6 0.3 0.7 0.55 zFeatures 1) Low On-resistance. 2) Small package (EMT3). 3) 2.5V drive. (1)Source (3) 0.8 (2) (1) 1.6 0.2 0.5 0.5 1.0 0.2 0.15 zApplications Switching zPackage specifications Package Type RTE002P02 Code Basic ordering unit (pieces) Taping TL 3000 (2)Gate (3)Drain Abbreviated symbol : TW zInner circuit (3) (2) ∗2 ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 P D ∗2 Tch Tstg Limits −20 ±12 ±0.2 ±0.4 0.15 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C/W 0.1Min. 1/2 DataSheet 4 U .com www.DataSheet4U.com RTE002P02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − VGS (th) −0.7 Gate threshold voltage − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 0.2 Forward transfer admittance Ciss − Input capacitance Cos...