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ZXTN2020F Dataheets PDF



Part Number ZXTN2020F
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN medium power transistor
Datasheet ZXTN2020F DatasheetZXTN2020F Datasheet (PDF)

www.DataSheet4U.com ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V(BR)CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • •.

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www.DataSheet4U.com ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V(BR)CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • • • • Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage Applications • • • MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive Ordering information Device ZXTN2020FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Pinout - top view Device marking 853 Issue 4 - January 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit 160 160 100 7 12 4 1 1.0 8 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W mW/oC W mW/oC W mW/oC oC Thermal resistance Parameter Junction to ambient (a) Symbol RθJA RθJA RθJA Value 125 104 80 Unit o o o C/W C/W C/W Junction to ambient (b) Junction to ambient (c) NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs. Issue 4 - January 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Characteristics Issue 4 - January 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEV V(BR)CEO V(BR)EBO ICEV ICBO IEBO HFE 100 100 35 Min. 160 160 100 7 Typ. 200 200 115 8 <1 <1 <1 220 200 60 13 Collector-emitter saturation voltage VCE(sat) 20 40 85 120 Base-emitter saturation voltage VBE(sat) 0.94 0.84 130 22 37 910 30 50 105 150 1.05 0.94 mV mV mV mV V V MHz pF ns ns 300 20 20 10 Max. Unit V V V V nA nA nA Conditions IC=100µA IC =1µA, -1V< VBE<+0.3V IC=10mA (a) IE=100µA VCES=128V, VBE = -1V VCB=128V VEB=6V IC=10mA, VCE=2V(a) IC=1A, VCE=2V(a) IC=4A, VCE=2V(a) IC=10A, VCE=2V(a) IC=0.1A, IB=5mA(a) IC=1A, IB=100mA(a) IC=2A, IB=100mA(a) IC=4A, IB=400mA(a) IC=4A, IB=400mA(a) IC=4A, VCE=2V(a) Ic=100mA, VCE=10V, f=50MHz VCB=10V, f=1MHz VCC=10V, IC=1A, IB1=IB2=100mA Base-emitter turn-on voltage VBE(on) Transition frequency Output capacitance Turn–on time Turn-off time fT Cobo t(on) t(off) NOTES: (a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%. Issue 4 - January 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Typical characteristics Issue 4 - January 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Packaging details - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex product.


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