SSM4435

www.DataSheet4U.com S outh S ea S emiconductor SSS ID -8A S S M4435 J ULY ,2004 V er1.1 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = -10V 35 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 25 -8 -40 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 DataSheet 4 U .com www.DataSheet4U.com S S M4435 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -8.0A V GS = -4.5V, ID = -5.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 8.0A Min Typ C Max Unit -30 -1 100 -1 -1.6 15 22 -20 6 1199 362 137 -3 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b ...