93C46CB3

ST93C46A,46C,46T ST93C47C,47T www.datasheet4u.com 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C46 version – 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCE for ”C” VERSION ST93C46A, ST93C46C, ST93C46T, ST93C47C, ST93C47T are replaced by the M93C46 8 1 PSDIP8 (B) 0.4mm Frame DESCRIPTION This specification covers a range of 1K bit serial EEPROM products, the ST93C46A,46C,46T specified at 5V±10% and the ST93C47C,47T specified at 3V to 5.5V. In the text, products are referred to as ST93C46. The ST93C46 is a 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). Table 1. Signal Names S D Q C ORG VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground w w w t a .D S a e h Figure 1. Logic Diagram U 4 t e VCC D C S .c m o 8 1 SO8 (M) 150mil Width Q ST93C46 ST93C47 ORG VSS AI00871C June 1997 This is information on a product still in production bu t not recommended for new de signs. w w w ....