93C46CB3 Datasheet: ST93C46CB





93C46CB3 ST93C46CB Datasheet

Part Number 93C46CB3
Description ST93C46CB
Manufacture ST Microelectronics
Total Page 13 Pages
PDF Download Download 93C46CB3 Datasheet PDF

Features: ST93C46A,46C,46T ST93C47C,47T www.datash eet4u.com 1K (64 x 16 or 128 x 8) SERI AL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIR E MEMORY PROGRAMMING INSTRUCTIONS SELF- TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING S INGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C46 version – 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATI ON 5ms TYPICAL PROGRAMMING TIME ENHANCE D ESD/LATCH UP PERFORMANCE for ”C” VERSION ST93C46A, ST93C46C, ST93C46T, S T93C47C, ST93C47T are replaced by the M 93C46 8 1 PSDIP8 (B) 0.4mm Frame DESC RIPTION This specification covers a ran ge of 1K bit serial EEPROM products, th e ST93C46A,46C,46T specified at 5V±10% and the ST93C47C,47T specified at 3V t o 5.5V. In the text, products are refer red to as ST93C46. The ST93C46 is a 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polys.

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ST93C46A,46C,46T
ST93C47C,47T
www.datasheet4u.com
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 64 x 16 or 128 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
mAUTO-ERASE
oREADY/BUSY SIGNAL DURING
PROGRAMMING
.cSINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST93C46 version
– 3V to 5.5V for ST93C47 version
USEQUENTIAL READ OPERATION
t45ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP
ePERFORMANCE for ”C” VERSION
ST93C46A, ST93C46C, ST93C46T,
eST93C47C, ST93C47T are replaced by the
M93C46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
hDESCRIPTION
SThis specification covers a range of 1K bit serial
taEEPROM products, the ST93C46A,46C,46T
specified at 5V±10% and the ST93C47C,47T
specified at 3V to 5.5V.
aIn the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable
.DProgrammableMemory (EEPROM) fabricated with
SGS-THOMSON’s High EnduranceSingle Polysili-
con CMOS technology. The memory is accessed
wthrough a serial input (D) and output (Q).
wTable 1. Signal Names
wS Chip Select Input
D
C
S
ORG
VCC
ST93C46
ST93C47
Q
D
Q
C
ORG
VCC
VSS
Serial Data Input
Serial Data Output
Serial Clock
Organisation Select
Supply Voltage
Ground
June 1997
This is information on a product still in production bu t not recommended for new de signs.
wwVSwS .DataSheAIe008t714C 1U/13.com

                    
                 






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