FDM21-05QC

www.DataSheet4U.com FMD 21-05QC FDM 21-05QC Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM FMD 3 3 5 4 1 2 2 4 ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ FDM Preliminary data 1 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 500 ±20 21 15 V V A A Features Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation ISOPLUS i4-PACTM package - isolated back surface - UL registered E72873 - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications chopper for power factor correction supply of high frequency transformer - switched mode power supplies - welding converters Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 220 mΩ 2.5 250 200 95 20 42 20 20 50 15 0.93 4.5 250 V µA µA nA nC nC nC ns ns ns ns 0.5 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf RthJC RthJH VGS = 10 V; ID = ID90 VDS = 20 V; ID = 0.25 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 0.5 VDSS; ID = 14 A VGS= 10 V; VDS = 0.5 VDSS ID = 14 A; RG = 2 Ω with heat tr...