XP04113

www.DataSheet4U.com Composite Transistors XP04113 (XP4113) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.12+0.05 –0.02 For switching/digital circuits ■ Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half 0.2±0.05 6 5 4 1.25±0.10 2.1±0.1 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 10˚ ■ Basic Part Number UNR2113 (UN2113) × 2 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −100 150 150 −55 to +150 Unit V V mA mW °C °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ : SC-88 0 to 0.1 Marking Symbol: 6S Internal Connection 6 Tr1 Tr2 5 4 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = −10 V, IE = 1 mA, f = 200 MHz Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V...