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Switching Applications. 5LP01C Datasheet

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Switching Applications. 5LP01C Datasheet






5LP01C Applications. Datasheet pdf. Equivalent




5LP01C Applications. Datasheet pdf. Equivalent





Part

5LP01C

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : EN N6619 5LP01C P-Channel Silicon MOSFET 5LP01C Ultrahigh-Speed Switching Appli cations Features • • • Package D imensions unit : mm 2091A [5LP01C] 0.4 Low ON-resistance. Ultrahigh-Speed Swi tching. 2.5V drive. 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2. 5 Specifications Absolute Maximum Rati ngs at Ta=25°C Parameter.
Manufacture

Sanyo Semicon Device

Datasheet
Download 5LP01C Datasheet


Sanyo Semicon Device 5LP01C

5LP01C; Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW 10µs, duty cycle≤1% Conditions Rat ings 0.8 1.1 1 : Gate 2 : Source 3 : Drain SANYO : CP Unit -50 ±10 --0.07 --0.28 0.25 150 V V A A W °C °C --55 to +150 Electrical Chara.


Sanyo Semicon Device 5LP01C

cteristics at Ta=25°C Parameter Drain-t o-Source Breakdown Voltage Zero-Gate Vo ltage Drain Current Gate-to-Sourse Leak age Current Cutoff Voltage Forward Tran sfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDS S IGSS VGS(off) yfs RDS(on)1 RDS( on)2 RDS(on)3 Conditions ID=--1mA, VGS= 0 VDS=-50V, VGS=0 VGS=± 8V, VDS=0 VDS= -10V, ID=-100µA VDS=-10V.


Sanyo Semicon Device 5LP01C

, ID=--40mA ID=--40mA, VGS=--4V ID=--20m A, VGS=-2.5V ID=--5mA, VGS=-1.5V Rating s min --50 10 ±10 -0.4 70 100 18 20 30 23 28 60 --1.4 typ max Unit V µA µA V mS Ω Ω Ω Marking : XB Continu ed on next page. Any and all SANYO pro ducts described or contained herein do not have specifications that can handle applications that require extremely hi gh levels of reliability, s.

Part

5LP01C

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : EN N6619 5LP01C P-Channel Silicon MOSFET 5LP01C Ultrahigh-Speed Switching Appli cations Features • • • Package D imensions unit : mm 2091A [5LP01C] 0.4 Low ON-resistance. Ultrahigh-Speed Swi tching. 2.5V drive. 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2. 5 Specifications Absolute Maximum Rati ngs at Ta=25°C Parameter.
Manufacture

Sanyo Semicon Device

Datasheet
Download 5LP01C Datasheet




 5LP01C
www.DataSheet4U.com
Ordering number : ENN6619
5LP01C
P-Channel Silicon MOSFET
5LP01C
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-Speed Switching.
2.5V drive.
Package Dimensions
unit : mm
2091A
[5LP01C]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : XB
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0
VDS=--50V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--40mA
ID=--40mA, VGS=--4V
ID=--20mA, VGS=--2.5V
ID=--5mA, VGS=--1.5V
1 : Gate
2 : Source
3 : Drain
SANYO : CP
Ratings
--50
±10
--0.07
--0.28
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
--50
--0.4
70
Ratings
typ
max
Unit
V
10 µA
±10 µA
--1.4 V
100 mS
18 23
20 28
30 60
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500 TS IM TA-2036 No.6619-1/4




 5LP01C
www.DataSheet4U.com
5LP01C
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
IS=--70mA, VGS=0
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
P.G 50
VDD= --25V
ID= --40mA
RL=625
D VOUT
5LP01C
S
Ratings
min typ max
Unit
7.4 pF
4.2 pF
1.3 pF
20 ns
35 ns
160 ns
150 ns
1.40
nC
0.16
nC
0.23
nC
0.85
1.2 V
--0.07
--0.06
--0.05
ID -- VDS
--2.5V
--2.0V
--0.04
--0.03
--0.02
VGS= --1.5V
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V IT00090
RDS(on) -- VGS
40
Ta=25°C
35
30
25
ID=20mA
20
40mA
15
10
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT00092
DataSheet4 U .com
--0.14
--0.12
ID -- VGS
VDS= --10V
--0.10
--0.08
--0.06
--0.04
--0.02
0
0
100
7
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
IT00091
VGS= --4V
5
3
2
10
--0.01
Ta=75°C
25°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
23
IT00093
No.6619-2/4




 5LP01C
www.DataSheet4U.com
1000
7
5
3
2
100
7
5
3
2
10
--0.01
40
35
30
25
20
15
RDS(on) -- ID
5LP01C
VGS= --2.5V
100
7
5
Ta=75°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
RDS(on) -- Ta
25°C
23
IT00094
I
D=
-I-D20=m--A40, mVAG,SV=
--2.5V
GS= --4.0V
3
2
10
--0.001
1.0
7
5
3
2
0.1
7
5
3
2
RDS(on) -- ID
VGS= --1.5V
Ta=75°C
25°C
--25°C
23
5 7 --0.01
Drain Current, ID -- A
yfs-- ID
23
IT00095
VDS= --10V
Ta= --25°C
75°C
25°C
10
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00096
IF -- VSD
3
VGS=0
2
--0.1
7
5
3
2
0.01
--0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 --0.1
Drain Current, ID -- A
SW Time -- ID
23
IT00097
VDD= --25V
VGS = --4V
tf
td(off)
tr
td(on)
--0.01
--0.5
100
7
5
3
2
--0.6
--0.7 --0.8 --0.9 --1.0 --1.1
--1.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT00098
f=1MHz
10
7
Ciss
5
Coss
3
2
1.0
7
5
3
2
0.1
0
Crss
--5 --10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, VDS -- V IT00100
10
--0.01
--10
VDS= --10V
--9 ID= --70mA
--8
23
5
Drain Current, ID -- A
VGS -- Qg
7 --0.1
IT00099
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00101
No.6619-3/4
DataSheet4 U .com



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