5LP01C

www.DataSheet4U.com Ordering number : ENN6619 5LP01C P-Channel Silicon MOSFET 5LP01C Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2091A [5LP01C] 0.4 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 0.8 1.1 1 : Gate 2 : Source 3 : Drain SANYO : CP Unit -50 ±10 --0.07 --0.28 0.25 150 V V A A W °C °C --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=-100µA VDS=-10V, ID=--40mA ID=--40mA, VGS=--4V ID=--20mA, VGS=-2.5V ID=--5mA, VGS=-1.5V Ratings min --50 10 ±10 -0.4 70 100 18 20 30 23 28 60 --1.4 typ max Unit V µA µA V mS Ω Ω Ω Marking : XB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support ...