P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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Ordering number : ENN6620
5LP01N
P-Channel Silicon MOSFET
5LP01N
Ultrahigh-Speed Switching Applica...
Description
www.DataSheet4U.com
Ordering number : ENN6620
5LP01N
P-Channel Silicon MOSFET
5LP01N
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2178
[5LP01N]
5.0 4.0 4.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.45 0.5 0.6 2.0 0.45 0.44 14.0
1
2
3
5.0
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1%
1.3
SANYO : NP
Conditions
Ratings -50 ±10 --0.07 --0.28 0.4 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=-100µA Ratings min --50 10 ±10 -0.4 --1.4 typ max Unit V µA µA V
Marking : XB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SA...
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