Ultrahigh-Speed Switching Applications
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Ordering number:ENN6425
P-Channel Silicon MOSFET
5LP02C
Ultrahigh-Speed Switching Applications
Fea...
Description
www.DataSheet4U.com
Ordering number:ENN6425
P-Channel Silicon MOSFET
5LP02C
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2091A
[5LP02C]
0.5
0.4 3
0.16
0 to 0.1
1.5 0.5 2.5
1
0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : CP
0.8 1.1
Ratings –50 ±10 –0.14 –0.56 0.25 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=–1mA, VGS=0 VDS=–50V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–70mA ID=–70mA, VGS=–4V ID=–40mA, VGS=–2.5V ID=–10mA, VGS=–1.5V –0.4 0.17 0.24 5.1 6 10 6.6 8.4 20 Conditions Ratings min –50 –10 ±10 –1.4 typ max Unit V µA µA V S Ω Ω Ω
Marking : XE
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, airc...
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