CPH6519

www.DataSheet4U.com Ordering number : ENN7399 CPH6519 NPN Epitaxial Planar Silicon Composite Transistors CPH6519 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit : mm 2212 [CPH6519] 6 5 4 0.6 0.2 1 2 0.2 3 0.95 0.6 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6519 is formed with two chips, being equivalent to the 2SC3689, placed in one package. Adoption of FBET process. High DC current gain (hFE=800 to 3200). High VEBO (VEBO≥15V). Excellent in thermal equilibrium and pair capability. 2.9 0.15 0.05 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1unit Conditions 1 : Base 1 2 : Emitter 1 3 : Collector 2 4 : Emitter 2 5 : Base 2 6 : Collector 1 SANYO : CPH6 Ratings 60 50 15 100 200 20 350 500 150 --55 to +150 Unit V V V mA mA mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Symbol ICBO IEBO hFE hFE(small/ large) VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA 800 0.8 1500 0.98 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA ...