2SK3497

www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current DC (Note ) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 180 ±12 10 30 130 150 −55~150 Unit V V A A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note ) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Note: Ensure that the channel temperature does not exceed 150°C. JEDEC JEITA ― ― 2-16C1B Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.96 50 Unit °C / W °C / W TOSHIBA Weight: 4.6 g (typ.) 2 1 3 1 DataSheet 4 U .com 2004-07-01 www.DataSheet4U.com 2SK3497 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS IDSS V (BR) DSS Vth VDS (ON) |Yfs| Ciss Crss Coss VDS = 30 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±12 V, VDS = 0 V VDS = 180V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 7 V, ID = 5 A VDS = 10 V, ID = 5 A Min — — 180 1.1 — 6.0 — — — Typ. — — — — — 12.0 2400 220 30 ...